tip30, tip30a,tip30b, tip30c pnp silicon power transistors
1 july 1968 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the tip29 series 30 w at 25c case temperature 1 a continuous collector current 3 a peak collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.24 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -0.4 a, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-base voltage (i e = 0) tip30 tip30a tip30b tip30c v cbo -80 -100 -120 -140 v collector-emitter voltage (i b = 0) tip30 tip30a tip30b tip30c v ceo -40 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -1 a peak collector current (see note 1) i cm -3 a continuous base current i b -0.4 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 30 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w unclamped inductive load energy (see note 4) ?li c 2 32 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 250 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
tip30, tip30a,tip30b, tip30c pnp silicon power transistors 2
july 1968 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma (see note 5) i b = 0 tip30 tip30a tip30b tip30c -40 -60 -80 -100 v i ces collector-emitter cut-off current v ce = -80 v v ce = -100 v v ce = -120 v v ce = -140 v v be =0 v be =0 v be =0 v be =0 tip30 tip30a tip30b tip30c -0.2 -0.2 -0.2 -0.2 ma i ceo collector cut-off current v ce = -30 v v ce = -60 v i b =0 i b =0 tip30/30a tip30b/30c -0.3 -0.3 ma i ebo emitter cut-off current v eb = -5 v i c =0 -1 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v i c =-0.2a i c = -1 a (see notes 5 and 6) 40 15 75 v ce(sat) collector-emitter saturation voltage i b = -125 ma i c = - 1a (see notes 5 and 6) -0.7 v v be base-emitter voltage v ce = -4 v i c = -1 a (see notes 5 and 6) -1.3 v h fe small signal forward current transfer ratio v ce = -10 v i c =-0.2a f = 1 khz 20 | h fe | small signal forward current transfer ratio v ce = -10 v i c =-0.2a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 4.17 c/w r ja junction to free air thermal resistance 62.5 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -1 a v be(off) = 4.3 v i b(on) = -0.1 a r l = 30 ? i b(off) = 0.1 a t p = 20 s, dc 2% 0.3 s t off turn-off time 1s
tip30, tip30a,tip30b, tip30c pnp silicon power transistors 3
july 1968 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -0001 -001 -01 -10 h fe - dc current gain 1 10 100 1000 tcs632ad v ce = -4 v t c = 25c t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs base current i b - base current - ma -01 -10 -10 -100 -1000 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs632ae i c = -100 ma i c = -300 ma i c = -1 a base-emitter voltage vs collector current i c - collector current - a -001 -01 -10 v be - base-emitter voltage - v -05 -06 -07 -08 -09 -10 tcs632af v ce = -4 v t c = 25c
tip30, tip30a,tip30b, tip30c pnp silicon power transistors 4
july 1968 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 -100 sas632ab tip30 tip30a tip30b tip30c t p = 300 s, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% dc operation maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 tis631ab
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